Determination of thickness of electrochemically etched Si layers passivated by Si3N4 by analysis of the experimental spectral reflectance

Porous silicon (pSi) samples for photovoltaics applications were prepared by the method of electrochemical etching in the hydrofluoric acid (HF) solution. P-type silicon wafers (boron-doped) were used as substrate. Different parameters of the electrochemical etching method (electrical potential and...

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Bibliographic Details
Published inAIP conference proceedings Vol. 2131; no. 1
Main Authors Králik, Martin, Jurečka, Stanislav, Pinčík, Emil
Format Journal Article Conference Proceeding
LanguageEnglish
Published Melville American Institute of Physics 29.07.2019
Subjects
Boron
Effective medium theory
Electrochemical etching
Etching
Hydrofluoric acid
Optical properties
Photovoltaic cells
Porous silicon
Reflectance
Silicon substrates
Silicon wafers
Solar cells
Spectral reflectance
Thickness
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Summary:Porous silicon (pSi) samples for photovoltaics applications were prepared by the method of electrochemical etching in the hydrofluoric acid (HF) solution. P-type silicon wafers (boron-doped) were used as substrate. Different parameters of the electrochemical etching method (electrical potential and current, etching time) have been used in the production of pSi samples. Optical properties of pSi samples were experimentally studied by UV-VIS spectrometer. The thickness of the porous layer formed on the Si substrate surface was determined by using theoretical model of spectral reflectance. Effective medium approximation theory (Looyenga) was used in construction of this theoretical model.
Bibliography:ObjectType-Conference Proceeding-1
SourceType-Conference Papers & Proceedings-1
content type line 21
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5119478