A new method for pHEMT noise-parameter determination based on 50-/Omega/ noise measurement system

A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-/Omega/ noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting th...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 51; no. 10; pp. 2079 - 2089
Main Authors Gao, Jianjun, Law, Choi Look, Wang, Hong, Aditya, S, Boeck, G
Format Journal Article
LanguageEnglish
Published 01.10.2003
Subjects
Devices
Fittings
Microwaves
Noise
Noise measurement
Semiconductor devices
Simulation
Tuners
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Summary:A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-/Omega/ noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2x20 mum, 2x40 mum, and 2x60 mum gatewidth (number of gate fingers x unit gatewidth) 0.25-mum double-heterojunction delta-doped pHEMTs.
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ISSN:0018-9480
DOI:10.1109/TMTT.2003.817680