Fundamental investigations on the spark plasma sintering/synthesis process. I. Effect of dc pulsing on reactivity

The characteristics of pulsing patterns in the SPS process were investigated, and the effect of pulsing on the reactivity between Si and Mo was determined. Pulsing patterns were composed of consecutive 3 ms peaks separated by a period of no current. The peaks (voltage) increased in magnitude with an...

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Published inMaterials science & engineering. A, Structural materials : properties, microstructure and processing Vol. 394; no. 1-2; pp. 132 - 138
Main Authors CHEN, W, ANSELMI-TAMBURINI, U, GARAY, J. E, GROZA, J. R, MUNIR, Z. A
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 15.03.2005
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Summary:The characteristics of pulsing patterns in the SPS process were investigated, and the effect of pulsing on the reactivity between Si and Mo was determined. Pulsing patterns were composed of consecutive 3 ms peaks separated by a period of no current. The peaks (voltage) increased in magnitude with an increase of the "off" time relative to the "on" time. The RMS value of the current was constant with changes in the pattern, indicating that this value is the governing condition to the power dissipation and thus temperature. Pulsing effects on the reactivity between layers of Si and Mo were investigated. The direction of the current had no effect on the thickness of the product layer. More importantly, the growth rate of the product formed at 1070, 1170 and 1270 deg C was independent of the pulse pattern, in the range studied in this work.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-5093
1873-4936
DOI:10.1016/j.msea.2004.11.020