Bulk lifetime determination in high purity silicon by contactless laser technique

• Published in: Journal of materials science. Materials in electronics Vol. 8; no. 3; pp. 213 - 216
• Main Authors: Fedortsov, A B, Letenko, D G, Churkin, Y V, Tsentsiper, L M, Vedde, J
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01.06.1997
• Subjects: Aluminum gallium arsenides; Beams (radiation); Electronics; Lasers; Light-emitting diodes; Modulation; Purity; Silicon
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/A:1018558500090

The result of bulk lifetime measurements in high purity silicon are presented. For this investigation we offer a new method and technique for determination of the bulk value of the excess carrier lifetime in high purity silicon. The effective value of the lifetime being measured in such a material depends on the dimensions of the ingot. In our method the sample to be investigated is illuminated by the modulated radiation of the AlGaAs light-emitting diode (LED), which generates the excess carriers, and by the probe beam of the He-Ne laser (λ^sub p^ = 3.39 μm), which becomes modulated when passing through the sample. The bulk lifetime is determined by the analysis of the dependence of the phase shift between these two modulations versus the distance r between the points on the sample surface illuminated by the sources.[PUBLICATION ABSTRACT]