Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

• Published in: Journal of materials science. Materials in electronics Vol. 12; no. 9; pp. 537 - 542
• Main Authors: Tan, Yan, Johnson, B, Seraphin, Supapan, Jiao, Jun, Anc, M J, Allen, L P
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01.09.2001
• Subjects: Annealing; Electronics; Islands; Oxides; Ramps; Reproduction; Silicon; Wafers

The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 keV with doses of 0.5, 0.83 and 1.8 × 10^sup 18^cm^sup -2^ oxygen followed by annealing treatment at different ramp rates (1^sup ~^ Cmin^sup -1^ or 5^sup ~^...