Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

• Published in: Journal of materials science. Materials in electronics Vol. 12; no. 9; pp. 537 - 542
• Main Authors: Tan, Yan, Johnson, B, Seraphin, Supapan, Jiao, Jun, Anc, M J, Allen, L P
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01.09.2001
• Subjects: Annealing; Electronics; Islands; Oxides; Ramps; Reproduction; Silicon; Wafers
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/A:1012457627561

The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 keV with doses of 0.5, 0.83 and 1.8 × 10^sup 18^cm^sup -2^ oxygen followed by annealing treatment at different ramp rates (1^sup ~^ Cmin^sup -1^ or 5^sup ~^ Cmin^sup -1^), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer. © 2001 Kluwer Academic Publishers[PUBLICATION ABSTRACT]