Photoelectrochemical behaviour of CdS Q-state semiconductor particles in 10,12-nonacosadiynoic acid polymer langmuir-blodgett films
CdS “Q-state” semiconductor particles from 2 to 10 nm diameter were nucleated and grown in 10,12-nonacosadiynoic acid (NCDA) polymer Langmuir-Blodgett (LB) films deposited on ITO plates. The polymerization process through exposure to UV-Visible light resulted in formation of the “blue form” followed...
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Published in | Journal of materials science Vol. 34; no. 21; pp. 5285 - 5291 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Heidelberg
Springer
01.11.1999
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | CdS “Q-state” semiconductor particles from 2 to 10 nm diameter were nucleated and grown in 10,12-nonacosadiynoic acid (NCDA) polymer Langmuir-Blodgett (LB) films deposited on ITO plates. The polymerization process through exposure to UV-Visible light resulted in formation of the “blue form” followed by the final “red form” after 60 min. X-ray photoelectron spectroscopy (XPS) measurements confirmed the deposition of the NCDA cadmium salt and the formation of the CdS particles after exposure to H2S(g) in the LB matrix. A study of the photoelectrochemical behaviour of these systems was conducted through polarisation current-voltage (I-V) curves in the range of 0 to −1000 mV (Standard Calomel Electrode-SCE). An average open-circuit voltage (VOC) from −600 to −700 mV values was observed for photoelectrochemical (PEC) cells constructed for the undoped NCDA polymer LB film with 10 nm diameter CdS particles. The I2-doped NCDA polymer film presented an increase in the conductivity compared with the undoped film but with a deterioration of stability of the PEC system. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1023/A:1004784501939 |