Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi2I7/ITO Structure

• Published in: Advanced materials interfaces Vol. 9; no. 17
• Main Authors: Yang, Xiaoting, Zhong, Shuai, Wang, Ke, Ye, Zhanhong, Zhang, Ruoxuan, Wei, Huanqi, Zhao, Lirong, Li, Wenping, Chen, Yan, Cui, Yimin
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.06.2022
• Subjects: AgBi 2I 7 perovskite‐like film; Ammonia; Annealing; Biocompatibility; Biodegradability; biodegradability of resistive random access memory devices; Biomedical materials; Electronic devices; Memory devices; Perovskites; Power management; Random access memory; ReRAM; resistance switching effect; Switching; ultralow power memory devices
• ISSN: 2196-7350; 2196-7350
• DOI: 10.1002/admi.202200237

The cross‐compatibility of electronic devices and biomedicine has greatly promoted the new medical diagnosis and treatment technology. Developing biodegradable resistive random access memory device (ReRAM) with low power is key to biomedical application. In this paper, the all‐inorganic air‐stable and high‐quality AgBi2I7 perovskite‐like film is successfully prepared by introducing Ag+ into the Bi‐I system. The device has a higher ON/OFF ratio after annealing in NH3 compared with annealing in vacuum, and the switching behavior changes from gradual type to abrupt filamentary type. Meanwhile, ultralow power characteristic with the set power of 6.9 × 10–7 W (0.42V@1.6 × 10–6A) and the reset power of 1.5 × 10–8 W (1V@1.5 × 10–8A) is achieved in the Ag/AgBi2I7/ITO memory devices after annealing in NH3. Good biodegradability is affirmed via put Ag/AgBi2I7/ITO device in PBS solution. Results show that the Ag/AgBi2I7/ITO memory devices are the promising candidate in the field of biomedical application. AgBi2I7 perovskite films have smaller concentration of pores after annealing in NH3 than vacuum. And the Ag/AgBi2I7/ITO memory devices have a higher ON/OFF ratio after annealing in NH3 compared with annealing in vacuum. Furthermore, the Ag/AgBi2I7/ITO memory devices based on AgBi2I7 perovskite films obtain the ultralow power characteristics and have potential application for the biodegradability.