Relaxation phenomena in a naturally disordered Pb3O4 semiconductor

Charge transfer in Pb3O4 structures has been investigated. Electric current dependences on time at temperatures of 300-370 K and at the dc electric field strength in the range of 2·105–9·105 V/m were measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 586; no. 1
Main Authors Pshchelko, N S, Kadi, Ya S
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2015
Subjects
Charge transfer
Electric field strength
Lead oxides
Physics
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Summary:Charge transfer in Pb3O4 structures has been investigated. Electric current dependences on time at temperatures of 300-370 K and at the dc electric field strength in the range of 2·105–9·105 V/m were measured. Flowing of relaxation polarizing current is shown to result in charge accumulation in the sample surface area. Experimental regularities coordinate with provisions of the relay mechanism of transfer of a charge with the participation of deep local levels. Values of the charge transfer parameters were determined.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/586/1/012016