A GMR device based on a magnetic nanostructure with a δ-doping

We study how to manipulate by the δ -doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor GaAs/Al x Ga 1 - x As heterostructure. We demonstrate an obvious GMR effect in the device w...

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Bibliographic Details
Published inJournal of computational electronics Vol. 16; no. 1; pp. 115 - 119
Main Authors Liu, Xu-Hui, Tang, Zheng-Hua, Kong, Yong-Hong, Fu, Xi, Gong, Yan-Jun
Format Journal Article
LanguageEnglish
Published New York Springer US 01.03.2017
Springer Nature B.V
Subjects
Controllability
Doping
Electrical Engineering
Energy
Engineering
Ferromagnetism
Giant magnetoresistance
Heterostructures
Information storage
Magnetic fields
Magnetoresistivity
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Optical and Electronic Materials
Theoretical
The
doping
Giant magnetoresistance (GMR) effect
The magnetoresitance ratio (MR)
Controllable GMR device
Magnetic nanostructure
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Summary:We study how to manipulate by the δ -doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor GaAs/Al x Ga 1 - x As heterostructure. We demonstrate an obvious GMR effect in the device with a δ -doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the δ -doping. These interesting results will be helpful for designing controllable GMR devices.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-016-0931-1