Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both elect...

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Bibliographic Details
Published inScientific reports Vol. 3; no. 1; p. 2319
Main Authors Zhou, Ye, Han, Su-Ting, Sonar, Prashant, Roy, V. A. L.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 31.07.2013
Nature Publishing Group
Subjects
639/301/1005/1007
639/301/1005/1008
639/638/298/917
639/766/1130/2798
Computer Storage Devices
Data processing
Electrodes
Equipment Design
Equipment Failure Analysis
Humanities and Social Sciences
Information storage
Information Storage and Retrieval - methods
Materials Testing
multidisciplinary
Nanoparticles
Polymers
Polymers - chemistry
Science
Semiconductors
Static Electricity
Transistors
Trapping
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Summary:The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.
ISSN:2045-2322
DOI:10.1038/srep02319