Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure

• Published in: Optics express Vol. 27; no. 14; p. 19692
• Main Authors: Lee, Seung Hee, Jeong, Hokyeong, Kim, Dong Yeong, Seo, Seung-Young, Han, Cheolhee, Okello, Odongo Francis Ngome, Lo, Jen-Iu, Peng, Yu-Chain, Oh, Chan-Hyoung, Lee, Gyeong Won, Shim, Jong-In, Cheng, Bing-Ming, Song, Kyung, Choi, Si-Yong, Jo, Moon-Ho, Kim, Jong Kyu
• Format: Journal Article
• Language: English
• Published: 08.07.2019
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.27.019692

Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.