Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

• Published in: Progress in photovoltaics Vol. 32; no. 3; pp. 156 - 171
• Main Authors: Chauhan, Pratibha, Agarwal, Surbhi, Srivastava, Vaibhava, Maurya, Sadanand, Hossain, M. Khalid, Madan, Jaya, Yadav, Rajesh Kumar, Lohia, Pooja, Dwivedi, Dilip Kumar, Alothman, Asma A.
• Format: Journal Article
• Language: English
• Published: Bognor Regis Wiley Subscription Services, Inc 01.03.2024
• Subjects: Aluminum; Buffer layers; Chalcopyrite; Circuits; Copper indium gallium selenides; Copper zinc tin sulfide; Cu2ZnSnS4; CuSbS2 BSF layer; CZTS; Energy bands; Energy conversion efficiency; In2Se3 buffer layer; Indium tin oxides; Nickel; Photovoltaic cells; Radiative recombination; SCAPS‐1D; Solar cells
• ISSN: 1062-7995; 1099-159X
• DOI: 10.1002/pip.3743

For photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures. Here, Kesterite solar cells are designed and simulated where CuSbS2 as BSF, and Ag2S and In2Se3 as buffer layers are used. With In2Se3, Jsc of 30.274 mA/cm2, FF of 89.15%, PCE of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. Results show improved performance compared with conventional structures.