Computational analysis of bandgap tuning, admittance and impedance spectroscopy measurements in lead‐free MASnI3 perovskite solar cell device

• Published in: International journal of energy research Vol. 46; no. 8; pp. 11456 - 11469
• Main Authors: Kumar, Manish, Raj, Abhishek, Kumar, Arvind, Anshul, Avneesh
• Format: Journal Article
• Language: English
• Published: Chichester, UK John Wiley & Sons, Inc 25.06.2022
• Subjects: Absorbers; admittance; Analytical methods; Bias; Capacitance; Computer applications; Defects; Dielectric constant; Electric potential; Electron affinity; Energy conversion efficiency; Energy gap; Expectancy; Heterostructures; Impedance; impedance spectroscopy; MASnI3; Nyquist plots; organic‐inorganic perovskite solar cell; Perovskites; Photovoltaic cells; SCAPS simulation; Simulators; Solar cells; Space charge; Spectroscopy; Temperature dependence; Tuning; Voltage
• ISSN: 0363-907X; 1099-114X
• DOI: 10.1002/er.7942

Summary Recently, lead‐free perovskite solar cell (PSC) heterostructure using CH3NH3SnI3 (MASnI3) absorber layer received significant attention due to their superior device performance. However, the effect of deep defect state on device performance is only little known about the MASnI3 absorber based PSC. In the present study, initially we optimized the power conversion efficiency of the device via the bandgap tuning and electron affinity variations in MASnI3 absorber layer using SCAPS‐1D simulator. Thereafter, the capacitance‐voltage (C‐V), Mott‐Shottkey (MS) (1/C2‐V) and conductance‐voltage (G‐V) measurements are performed through simulation approach, which confirmed a solid sign of deep defects in the perovskite heterostructure device. In addition, temperature dependent capacitance‐frequency (C‐f) characteristics confirmed the clear expectancy of thermally‐induced variations in capacitance (or dielectric constant) under illumination and dark, respectively. Further, supremacy of the space charge region in MASnI3 based PSC is confirmed from the voltage dependent semicircular nature of the Nyquist plots. Shrink in the semicircles of the Nyquist plots with the increase of the forward bias voltage also confirm the improvement of carriers under forward bias which increase the conductivity and therefore decrease the impedance. Power conversion efficiency optimization via bandgap tuning. Deep defects confirmation via capacitance measurements. Supremacy of the space charge region and improvement of carriers under forward bias confirm via impedance spectroscopy.