Infrared optical properties of Li- and Xe-irradiated KTiOPO4

KTP was irradiated at 100 K and 295 K with Li ions and at 295 K with Xe ions. The infrared spectra of the Li-irradiated samples are consistent with a system consisting of a layer stack of undamaged KTP/amorphous KTP/undamaged substrate. Annealing of the samples leads to a growth of the covering laye...

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Published inApplied physics. A, Materials science & processing Vol. 78; no. 4; pp. 589 - 596
Main Authors MAYERHÖFER, T. G, HÖCHE, T, SCHREMPEL, F
Format Journal Article
LanguageEnglish
Published Berlin Springer 01.03.2004
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Summary:KTP was irradiated at 100 K and 295 K with Li ions and at 295 K with Xe ions. The infrared spectra of the Li-irradiated samples are consistent with a system consisting of a layer stack of undamaged KTP/amorphous KTP/undamaged substrate. Annealing of the samples leads to a growth of the covering layer at the expense of the amorphous layer. The damage yield of the sample irradiated at 100 K is noticeably higher, resulting in a greater thickness of the amorphous layer. The spectra show interference effects, indicating homogenous layer thicknesses. Such interference effects are absent for the Xe-irradiated samples. Spectral simulations revealed that there is no buried amorphous layer present in these samples. Instead, the latter samples consist of amorphous inclusions in undamaged crystalline KTP with a volume fraction depending on the energy dose. The spectra of the sample irradiated at an ion fluence of 3X10 cm are very similar to the spectrum of glassy KTP, indicating a strong structural relationship between ion-damaged amorphous KTP and glassy KTP. The dielectric function of amorphous KTP was determined and used, together with the principal dielectric functions of single-crystal KTP, to successfully simulate the spectra of a sample irradiated at an ion fluence of 2X10 cm by either the effective-medium approximation (EMA) or average-refractive-index theory (ARIT).
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-003-2145-1