Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy

• Published in: Journal of crystal growth Vol. 378; pp. 480 - 484
• Main Authors: ZANDER, M, NISHINAGA, J, HORIKOSHI, Y
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.09.2013
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion in solids; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Gallium arsenide; Gallium arsenides; General studies of phase transitions; Indium arsenides; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microstructure; Molecular, atomic, ion, and chemical beam epitaxy; Nanocomposites; Nanomaterials; Nanoscale materials and structures: fabrication and characterization; Nanostructure; Nucleation; Physics; Quantum dots; Transport properties of condensed matter (nonelectronic); Gallium arsenides; Gallium; Nucleation; Selective area; A1. Nanostructures; Nanostructures; Optimization; Interface properties; Selective growth; A3. Molecular beam epitaxy; Molecular beam epitaxy; Diffusion; Quantum dots; Dispersive spectrometry; A3. Selective epitaxy; Indium arsenides; III-V compound; Operating conditions; Transmission electron microscopy; B2. Semiconducting indium compounds; Growth mechanism; Indium compounds; Microstructure; Nanostructured materials; A3. Migration enhanced epitaxy; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2012.12.089

Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy is studied. By an optimization of the growth conditions and a study of the facet development, well-defined GaAs microstructures with facets mostly belonging to the crystal plane families {01n}, {11n} and (001) are fabricated. Subsequently deposited InAs shows a preferred nucleation on (001) top facets as well as on {012}/{013} and {011} facet boundaries. By the understanding of the InAs nucleation mechanism, precisely positioned In(Ga)As/GaAs nanostructures such as quantum dots and quantum dot chains are achieved. To investigate the interface properties, transmission electron microscopy and energy-dispersive x-ray spectroscopy measurements are performed. The measurements reveal a relatively high incorporation of Ga into the InAs nanostructures even for InAs deposited at a low growth temperature of 470 C.