The transconductance of a nano-clustered subsurface layer in Si(+)-implanted PMMA

The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in pojymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of the Si(+) fluence in the range 10(15) -10(17) cm(-2) Depending on the impla...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 11; no. 9; pp. 1206 - 1209
Main Authors Hadjichristov, G B, Gueorguiev, V K, Ivanov, Tz E, Marinov, Y G, Ivanov, V G, Faulques, E
Format Journal Article
LanguageEnglish
Published 01.09.2009
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Summary:The transconductance of a nano-clustered organic subsurface layer of a thickness of about 100 nm, formed in pojymethylmethacrylate (PMMA) by implantation with silicon ions at an energy of 50 keV, is examined as a function of the Si(+) fluence in the range 10(15) -10(17) cm(-2) Depending on the implantation regime, the ion-modified region of the Si(+)-implanted PMMA exhibits a transconductance and a field effect that can be used for electronic applications.
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ISSN:1454-4164