Czochralski growth of pure and doped lead tungstate single crystals

In this paper we report the growth of pure and doped lead tungstate (PbWO4) single crystals by the Czochralski method, using a resistive heating system. Variations in the nature of crystal cracking were observed. These structural defects are related to the seed rotation, crystal pulling rate and the...

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Bibliographic Details
Published inJournal of Optoelectronics and Advanced Materials Vol. 9; no. 5; pp. 1254 - 1256
Main Authors Darabont, Al, Neamtu, C
Format Journal Article
LanguageEnglish
Published 01.05.2007
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Summary:In this paper we report the growth of pure and doped lead tungstate (PbWO4) single crystals by the Czochralski method, using a resistive heating system. Variations in the nature of crystal cracking were observed. These structural defects are related to the seed rotation, crystal pulling rate and the axial temperature gradient. A gradual decrease in the optical quality (from top to bottom) of the growing crystal was observed. Repeated growth processes and the high purity of the starting materials (Pb(NO3)2 and Na2WO4) yielded transparent crystals. Doped lead tungstate crystals were grown for luminescence studies.
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ISSN:1454-4164