Bi2O3 monolayers from elemental liquid bismuth
Atomically thin, semiconducting transition and post transition metal oxides are emerging as a promising category of materials for high-performance oxide optoelectronic applications. However, the wafer-scale synthesis of crystalline atomically thin samples has been a challenge, particularly for oxide...
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Published in | Nanoscale Vol. 10; no. 33; pp. 15615 - 15623 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
07.09.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Atomically thin, semiconducting transition and post transition metal oxides are emerging as a promising category of materials for high-performance oxide optoelectronic applications. However, the wafer-scale synthesis of crystalline atomically thin samples has been a challenge, particularly for oxides that do not present layered crystal structures. Herein we use a facile, scalable method to synthesise ultrathin bismuth oxide nanosheets using a liquid metal facilitated synthesis approach. Monolayers of α-Bi2O3 featuring sub-nanometre thickness, high crystallinity and large lateral dimensions could be isolated from the liquid bismuth surface. The nanosheets were found to be n-type semiconductors with a direct band gap of ∼3.5 eV and were suited for developing ultra violet (UV) photodetectors. The developed devices featured a high responsivity of ∼400 AW−1 when illuminated with 365 nm UV light and fast response times of ∼70 μs. The developed methods and obtained nanosheets can likely be developed further towards the synthesis of other bismuth based atomically thin chalcogenides that hold promise for electronic, optical and catalytic applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c8nr03788d |