Tungsten doping to high-Tc Bi-Pb-Ca-Sr-Cu-O thick films prepared by melt-solidification

• Published in: Journal of materials science letters Vol. 11; no. 10; pp. 686 - 688
• Main Authors: CHIGUSA, H, TATSUMISAGO, M, TOHGE, N, MINAMI, T
• Format: Journal Article
• Language: English
• Published: Dordrecht Kluwer Academic Publishers 01.01.1992
• Subjects: Chemistry; Elements and non-metal compounds (oxides, hydroxides, hydrides, sulfides, carbides, ...); Exact sciences and technology; Inorganic chemistry and origins of life; Preparations and properties; Electrical conductivity; Thick film; Bismuth Calcium Copper Lead Strontium Oxides Mixed; Transition metal Compounds; Tungsten; Differential thermal analysis; Physical properties; Alkaline earth metal Compounds; High temperature superconductor
• ISSN: 0261-8028
• DOI: 10.1007/BF00728907

The melt-solidification method, in which the melt of starting materials on MgO substrates is cooled to a given heat-treatment temperature in order to grow superconducting phases, is one of the most promising techniques for producing Bi-based high-Tc superconducting thick films. Tungsten-doped Bi-Pb-Ca-Sr-Cu-O films were prepared by this method, and the temperature dependence of resistivity, XRD and DTA measurements for doped and undoped films were compared. It was concluded that adding W to Bi1.6Pb0.4Ca2Sr2Cu3Ox films using the melt-solidification method lowers the optimum heat-treatment temperature compared with undoped samples. This is probably because W-doping lowers the temperature at which partial melting occurs. The optimum heat-treatment for which Tc(zero) values were maximised was 840 C for the doped samples, compared with a reported value of 855 C for undoped samples. 13 refs.