An inertial sensor technology using DRIE and wafer bonding with interconnecting capability

A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the `footing effect' and the `bowing effect,' which a...

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Bibliographic Details
Published inJournal of microelectromechanical systems Vol. 8; no. 4; pp. 403 - 408
Main Authors ISHIHARA, K, YUNG, C.-F, AYON, A. A, SCHMIDT, M. A
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.1999
Subjects
Accelerometers
Aspect ratio
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Masks
Mechanical instruments, equipment and techniques
Micromechanical devices and systems
Physics
Reactive ion etching
Semiconductor device manufacture
Accelerometers
Electrical signal
Reactive ion etching
Manufacturing processes
Wafers
Measurement sensor
SEM
Optical microscopes
Microstructure
Pattern(Microelectronics)
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Summary:A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the `footing effect' and the `bowing effect,' which are inherent in DRIE processes, were investigated in detail. A mask layout strategy for solving the footing effect was developed. A novel two-step etching process was developed for solving the bowing effect. Lateral accelerometers (one-axis and two-axis) were successfully fabricated using this technology.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1057-7157
1941-0158
DOI:10.1109/84.809054