Visible and infrared (1.54 μm) emission from Er-implanted porous Si for photonic applications

• Published in: Journal of electronic materials Vol. 25; no. 1; pp. 43 - 49
• Main Authors: FEREYDOON NAMAVAR, FENG LU, PERRY, C. H, CREMINS, A, NADER KALKHORAN, SOREF, R. A
• Format: Conference Proceeding Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 1996
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Light-emitting devices; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optoelectronic devices; Other solid inorganic materials; Photoluminescence; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ion implantation; Porous materials; Photoluminescence; Light emitting diodes; Silicon; Experimental study; Erbium additions
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/BF02666172

This paper explores the challenges faced in developing efficient room temperature porous Si-based light emitting diodes. We experimentally demonstrate that porous Si is an excellent host material for erbium ions to emit strong, room temperature, sharp-line luminescence at 1.54 mu m. A comparison of photoluminescene data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescene efficiency. Due to the 650 to 850 degree C annealing, it is unlikely that the environment of erbium in our samples is amorphous Si.