Spin-on-polymer methylsilsesquioxane for sub-micron intermetal dielectric application

The gapfill capability, dielectric property, thermal stability, thickness uniformity and shrinkage of methylsilsesquioxane are explored. It is shown that methylsilsesquioxane has a low epsilon value of 2.52 at 1 MHz which is suitable for 0.25 mu m device technology. It also possesses superior gapfil...

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Bibliographic Details
Published inJournal of materials science letters Vol. 18; no. 17; pp. 1437 - 1439
Main Authors CHUA, C. T, SARKAR, G, CHOOI, S. Y. M, CHAN, L
Format Journal Article
LanguageEnglish
Published Dordrecht Kluwer Academic Publishers 01.09.1999
Subjects
Applied sciences
Electronics
Exact sciences and technology
Inorganic and organomineral polymers
Microelectronic fabrication (materials and surfaces technology)
Physicochemistry of polymers
Properties and characterization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silsesquioxane polymer
Dielectric properties
Submicrometer
Refraction index
Crosslinking
Thermal reaction
Experimental study
Property processing relationship
Layer thickness
Thin film
Interconnection
Optical properties
Integrated circuit
Size effect
Permittivity
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Summary:The gapfill capability, dielectric property, thermal stability, thickness uniformity and shrinkage of methylsilsesquioxane are explored. It is shown that methylsilsesquioxane has a low epsilon value of 2.52 at 1 MHz which is suitable for 0.25 mu m device technology. It also possesses superior gapfill capability down to 0.06 mu m gaps. It has thermal stability up to 500 degree C from FTIR spectra and refractive index studies. FTIR spectra also show that there is no significant change in the chemical bondings after curing at 500 degree C.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0261-8028
DOI:10.1023/A:1006683726509