Heteroepitaxial van der Waals semiconductor superlattices

A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we r...

Full description

Saved in:
Bibliographic Details
Published inNature nanotechnology Vol. 16; no. 10; pp. 1092 - 1098
Main Authors Jin, Gangtae, Lee, Chang-Soo, Okello, Odongo F. N., Lee, Suk-Ho, Park, Min Yeong, Cha, Soonyoung, Seo, Seung-Young, Moon, Gunho, Min, Seok Young, Yang, Dong-Hwan, Han, Cheolhee, Ahn, Hyungju, Lee, Jekwan, Choi, Hyunyong, Kim, Jonghwan, Choi, Si-Young, Jo, Moon-Ho
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.10.2021
Nature Publishing Group
Subjects
140/125
140/133
639/301/357/1018
639/925/357/1018
Chalcogenides
Chemistry and Materials Science
Crystals
Dissimilar metals
Electronic systems
Epitaxial growth
Epitaxy
Excitation
Interlayers
Kinetics
Materials Science
Metalorganic chemical vapor deposition
Metals
Molybdenum disulfide
Nanotechnology
Nanotechnology and Microengineering
Organic chemicals
Organic chemistry
Semiconductors
Stacking
Superlattices
Transition metal compounds
Tungsten disulfide
Online AccessGet full text

Cover

Abstract A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS 2 , WS 2 and WSe 2 . Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal–organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations—one of the most distinctive electronic features in vdW ML semiconductors—which scale with the stack numbers n in our (MoS 2 /WS 2 ) n SLs on optical excitations. Kinetics-controlled van der Waals epitaxy in the near-equilibrium limit by metal–organic chemical vapour deposition enables precise layer-by-layer stacking of dissimilar transition metal dichalcogenides.
AbstractList A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS 2 , WS 2 and WSe 2 . Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal–organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations—one of the most distinctive electronic features in vdW ML semiconductors—which scale with the stack numbers n in our (MoS 2 /WS 2 ) n SLs on optical excitations. Kinetics-controlled van der Waals epitaxy in the near-equilibrium limit by metal–organic chemical vapour deposition enables precise layer-by-layer stacking of dissimilar transition metal dichalcogenides.
A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS , WS and WSe . Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal-organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations-one of the most distinctive electronic features in vdW ML semiconductors-which scale with the stack numbers n in our (MoS /WS ) SLs on optical excitations.
A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS2, WS2 and WSe2. Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal–organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations—one of the most distinctive electronic features in vdW ML semiconductors—which scale with the stack numbers n in our (MoS2/WS2)n SLs on optical excitations.Kinetics-controlled van der Waals epitaxy in the near-equilibrium limit by metal–organic chemical vapour deposition enables precise layer-by-layer stacking of dissimilar transition metal dichalcogenides.
A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS2, WS2 and WSe2. Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal-organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations-one of the most distinctive electronic features in vdW ML semiconductors-which scale with the stack numbers n in our (MoS2/WS2)n SLs on optical excitations.A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into van der Waals (vdW) superlattices (SLs) could enable the realization of novel structures with previously unexplored functionalities. Here we report the atomic layer-by-layer epitaxial growth of vdW SLs with programmable stacking periodicities, composed of more than two kinds of dissimilar TMDC MLs, such as MoS2, WS2 and WSe2. Using kinetics-controlled vdW epitaxy in the near-equilibrium limit by metal-organic chemical vapour depositions, we achieved precise ML-by-ML stacking, free of interlayer atomic mixing, which resulted in tunable two-dimensional vdW electronic systems. As an example, by exploiting the series of type II band alignments at coherent two-dimensional vdW heterointerfaces, we demonstrated valley-polarized carrier excitations-one of the most distinctive electronic features in vdW ML semiconductors-which scale with the stack numbers n in our (MoS2/WS2)n SLs on optical excitations.
Author Yang, Dong-Hwan
Okello, Odongo F. N.
Cha, Soonyoung
Min, Seok Young
Choi, Si-Young
Lee, Chang-Soo
Moon, Gunho
Han, Cheolhee
Park, Min Yeong
Jo, Moon-Ho
Choi, Hyunyong
Kim, Jonghwan
Lee, Jekwan
Lee, Suk-Ho
Ahn, Hyungju
Seo, Seung-Young
Jin, Gangtae
Author_xml – sequence: 1
  givenname: Gangtae
  orcidid: 0000-0001-8634-2623
  surname: Jin
  fullname: Jin, Gangtae
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 2
  givenname: Chang-Soo
  surname: Lee
  fullname: Lee, Chang-Soo
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 3
  givenname: Odongo F. N.
  surname: Okello
  fullname: Okello, Odongo F. N.
  organization: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 4
  givenname: Suk-Ho
  surname: Lee
  fullname: Lee, Suk-Ho
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 5
  givenname: Min Yeong
  surname: Park
  fullname: Park, Min Yeong
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 6
  givenname: Soonyoung
  surname: Cha
  fullname: Cha, Soonyoung
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
– sequence: 7
  givenname: Seung-Young
  surname: Seo
  fullname: Seo, Seung-Young
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 8
  givenname: Gunho
  surname: Moon
  fullname: Moon, Gunho
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 9
  givenname: Seok Young
  surname: Min
  fullname: Min, Seok Young
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 10
  givenname: Dong-Hwan
  surname: Yang
  fullname: Yang, Dong-Hwan
  organization: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 11
  givenname: Cheolhee
  orcidid: 0000-0002-8936-9407
  surname: Han
  fullname: Han, Cheolhee
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 12
  givenname: Hyungju
  surname: Ahn
  fullname: Ahn, Hyungju
  organization: Pohang Accelerator Laboratory
– sequence: 13
  givenname: Jekwan
  surname: Lee
  fullname: Lee, Jekwan
  organization: Department of Physics & Astronomy, Seoul National University
– sequence: 14
  givenname: Hyunyong
  orcidid: 0000-0003-3295-1049
  surname: Choi
  fullname: Choi, Hyunyong
  organization: Department of Physics & Astronomy, Seoul National University
– sequence: 15
  givenname: Jonghwan
  surname: Kim
  fullname: Kim, Jonghwan
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 16
  givenname: Si-Young
  orcidid: 0000-0003-1648-142X
  surname: Choi
  fullname: Choi, Si-Young
  organization: Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
– sequence: 17
  givenname: Moon-Ho
  orcidid: 0000-0002-3160-358X
  surname: Jo
  fullname: Jo, Moon-Ho
  email: mhjo@postech.ac.kr
  organization: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)
BackLink https://www.ncbi.nlm.nih.gov/pubmed/34267369$$D View this record in MEDLINE/PubMed
BookMark eNpdkE1LxDAQhoOsuB_6BzxIwYuX6uSrbY6yqCsseFE8hjSdSpd-mbSi--uN7qrgaQbm4Z2ZZ04mbdciIacULinw7MoLKhMZA6MxgBIs3h6QGU1FFnOu5OS3z9IpmXu_AZBMMXFEplywJOWJmhG1wgFdh301mPfK1NGbaaMCXfRsTO0jj01lu7YY7dC5yI89utoMQ2XRH5PDMiB4sq8L8nR787hcxeuHu_vl9TruGeVDWJ9LpSA1gjEAavNCJlAwEChoCapMc5OozEBSZEIwUVJjRYlcGGvRcIF8QS52ub3rXkf0g24qb7GuTYvd6DWT4auMpVQG9PwfuulG14brApVRUCrhSaDO9tSYN1jo3lWNcR_6R0oA-A7wYdS-oPuLoaC_1Oudeh3U62_1ess_AV9DdVA
Cites_doi 10.1038/s41586-019-0975-z
10.1038/nnano.2014.167
10.1021/nl5006542
10.1021/acsnano.7b07059
10.1126/science.281.5379.956
10.1038/nchem.1589
10.1126/science.aaw4194
10.1038/nmat3386
10.1103/PhysRevLett.101.196405
10.1103/RevModPhys.54.437
10.1126/sciadv.aax1325
10.1038/s41586-020-2098-y
10.1016/0022-4596(87)90057-0
10.1063/1.90457
10.1021/acs.chemmater.0c00949
10.1126/science.aao5360
10.1038/nature12385
10.1038/ncomms5966
10.1143/JJAP.19.L225
10.1126/science.264.5158.553
10.1126/science.1235547
10.1126/sciadv.1700518
10.1126/science.276.5311.377
10.1016/S0022-0248(98)01329-3
10.1103/PhysRevLett.115.187002
10.1126/science.aac9439
10.1038/s41565-018-0233-9
10.1038/ncomms8372
10.1038/nnano.2017.100
10.1103/PhysRevB.33.3657
10.1063/1.881353
10.1038/s41565-020-0633-5
10.1103/PhysRevLett.54.2441
10.1038/nature26154
10.1038/s41586-021-03338-0
10.1021/nl3040042
10.1126/sciadv.aaw3180
10.1063/1.333084
10.1038/305668a0
10.1038/nature23905
10.1038/s41467-019-13893-w
10.1038/nature14417
10.1103/PhysRevLett.105.136805
10.1038/417156a
10.1038/nnano.2010.279
10.1038/nphoton.2007.293
10.1038/nature26160
ContentType Journal Article
Copyright The Author(s), under exclusive licence to Springer Nature Limited 2021
2021. The Author(s), under exclusive licence to Springer Nature Limited.
The Author(s), under exclusive licence to Springer Nature Limited 2021.
Copyright_xml – notice: The Author(s), under exclusive licence to Springer Nature Limited 2021
– notice: 2021. The Author(s), under exclusive licence to Springer Nature Limited.
– notice: The Author(s), under exclusive licence to Springer Nature Limited 2021.
DBID NPM
3V.
7QO
7U5
7X7
7XB
88E
8FD
8FE
8FG
8FH
8FI
8FJ
8FK
ABJCF
ABUWG
AEUYN
AFKRA
ARAPS
AZQEC
BBNVY
BENPR
BGLVJ
BHPHI
CCPQU
D1I
DWQXO
F28
FR3
FYUFA
GHDGH
GNUQQ
HCIFZ
K9.
KB.
L6V
L7M
LK8
M0S
M1P
M7P
M7S
P5Z
P62
P64
PDBOC
PHGZM
PHGZT
PJZUB
PKEHL
PPXIY
PQEST
PQGLB
PQQKQ
PQUKI
PTHSS
7X8
DOI 10.1038/s41565-021-00942-z
DatabaseName PubMed
ProQuest Central (Corporate)
Biotechnology Research Abstracts
Solid State and Superconductivity Abstracts
Health & Medical Collection
ProQuest Central (purchase pre-March 2016)
Medical Database (Alumni Edition)
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
ProQuest Natural Science Collection
Hospital Premium Collection
Hospital Premium Collection (Alumni Edition)
ProQuest Central (Alumni) (purchase pre-March 2016)
Materials Science & Engineering Collection
ProQuest Central (Alumni)
ProQuest One Sustainability (subscription)
ProQuest Central UK/Ireland
Advanced Technologies & Aerospace Collection
ProQuest Central Essentials
Biological Science Collection
ProQuest Central
Technology Collection
Natural Science Collection
ProQuest One Community College
ProQuest Materials Science Collection
ProQuest Central Korea
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
Health Research Premium Collection
Health Research Premium Collection (Alumni)
ProQuest Central Student
SciTech Premium Collection
ProQuest Health & Medical Complete (Alumni)
Materials Science Database
ProQuest Engineering Collection
Advanced Technologies Database with Aerospace
ProQuest Biological Science Collection
ProQuest Health & Medical Collection
Medical Database
Biological Science Database
Engineering Database
Advanced Technologies & Aerospace Database
ProQuest Advanced Technologies & Aerospace Collection
Biotechnology and BioEngineering Abstracts
Materials Science Collection
ProQuest Central Premium
ProQuest One Academic
ProQuest Health & Medical Research Collection
ProQuest One Academic Middle East (New)
ProQuest One Health & Nursing
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Applied & Life Sciences
ProQuest One Academic
ProQuest One Academic UKI Edition
Engineering Collection
MEDLINE - Academic
DatabaseTitle PubMed
ProQuest Central Student
ProQuest Advanced Technologies & Aerospace Collection
ProQuest Central Essentials
SciTech Premium Collection
ProQuest One Applied & Life Sciences
ProQuest One Sustainability
Health Research Premium Collection
Natural Science Collection
Health & Medical Research Collection
Biological Science Collection
ProQuest Central (New)
ProQuest Medical Library (Alumni)
Engineering Collection
ANTE: Abstracts in New Technology & Engineering
Advanced Technologies & Aerospace Collection
Engineering Database
ProQuest Biological Science Collection
ProQuest One Academic Eastern Edition
ProQuest Hospital Collection
ProQuest Technology Collection
Health Research Premium Collection (Alumni)
Biological Science Database
ProQuest Hospital Collection (Alumni)
Biotechnology and BioEngineering Abstracts
ProQuest Health & Medical Complete
ProQuest One Academic UKI Edition
Solid State and Superconductivity Abstracts
Engineering Research Database
ProQuest One Academic
ProQuest One Academic (New)
Technology Collection
Technology Research Database
ProQuest One Academic Middle East (New)
Materials Science Collection
ProQuest Health & Medical Complete (Alumni)
ProQuest Central (Alumni Edition)
ProQuest One Community College
ProQuest One Health & Nursing
ProQuest Natural Science Collection
ProQuest Central
ProQuest Health & Medical Research Collection
ProQuest Engineering Collection
Biotechnology Research Abstracts
Health and Medicine Complete (Alumni Edition)
ProQuest Central Korea
Materials Science Database
Advanced Technologies Database with Aerospace
ProQuest Materials Science Collection
ProQuest SciTech Collection
Advanced Technologies & Aerospace Database
ProQuest Medical Library
Materials Science & Engineering Collection
ProQuest Central (Alumni)
MEDLINE - Academic
DatabaseTitleList
PubMed
ProQuest Central Student
MEDLINE - Academic
Database_xml – sequence: 1
  dbid: NPM
  name: PubMed
  url: https://proxy.k.utb.cz/login?url=http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed
  sourceTypes: Index Database
– sequence: 2
  dbid: 8FG
  name: ProQuest Technology Collection
  url: https://search.proquest.com/technologycollection1
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1748-3395
EndPage 1098
ExternalDocumentID 34267369
10_1038_s41565_021_00942_z
Genre Journal Article
GrantInformation_xml – fundername: M.-H.J. acknowledges the support of the Institute for Basic Science (IBS), Korea under Project Code IBS-R014-A1.
GroupedDBID ---
-~X
0R~
123
29M
39C
3V.
4.4
53G
5BI
5M7
5S5
6OB
70F
7X7
88E
8FE
8FG
8FH
8FI
8FJ
8R4
8R5
AAEEF
AARCD
AAYZH
AAZLF
ABAWZ
ABDBF
ABJCF
ABJNI
ABLJU
ABUWG
ACBWK
ACGFS
ACIWK
ACPRK
ACUHS
ADBBV
AENEX
AEUYN
AFANA
AFBBN
AFKRA
AFLOW
AFRAH
AFSHS
AFWHJ
AGAYW
AGHTU
AHBCP
AHMBA
AHOSX
AHSBF
AIBTJ
ALFFA
ALIPV
ALMA_UNASSIGNED_HOLDINGS
ARAPS
ARMCB
ASPBG
AVWKF
AXYYD
AZFZN
BBNVY
BENPR
BGLVJ
BHPHI
BKKNO
BPHCQ
BVXVI
CCPQU
CS3
D1I
DB5
DU5
EBS
EE.
EJD
EMOBN
ESX
EXGXG
F5P
FEDTE
FQGFK
FSGXE
FYUFA
HCIFZ
HMCUK
HVGLF
HZ~
I-F
KB.
L6V
LK8
M1P
M7P
M7S
MM.
NNMJJ
O9-
ODYON
P2P
P62
PDBOC
PQQKQ
PROAC
PSQYO
PTHSS
Q2X
RNS
RNT
RNTTT
SHXYY
SIXXV
SNYQT
SOJ
SV3
TAOOD
TBHMF
TDRGL
TSG
TUS
UKHRP
~8M
ABFSG
ACSTC
AEZWR
AFHIU
AHWEU
AIXLP
ALPWD
ATHPR
NFIDA
NPM
PHGZM
PHGZT
PJZUB
PPXIY
PQGLB
7QO
7U5
7XB
8FD
8FK
AZQEC
DWQXO
F28
FR3
GNUQQ
K9.
L7M
P64
PKEHL
PQEST
PQUKI
7X8
ID FETCH-LOGICAL-p213t-33b59907a422001cbd560d204e41f09f7ba698a06d84424f1ac4fe34accea34e3
IEDL.DBID 7X7
ISSN 1748-3387
1748-3395
IngestDate Fri Jul 11 08:38:05 EDT 2025
Wed Aug 13 09:04:38 EDT 2025
Mon Jul 21 05:39:54 EDT 2025
Fri Feb 21 02:41:38 EST 2025
IsPeerReviewed true
IsScholarly true
Issue 10
Language English
License 2021. The Author(s), under exclusive licence to Springer Nature Limited.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-p213t-33b59907a422001cbd560d204e41f09f7ba698a06d84424f1ac4fe34accea34e3
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ORCID 0000-0001-8634-2623
0000-0003-1648-142X
0000-0003-3295-1049
0000-0002-3160-358X
0000-0002-8936-9407
PMID 34267369
PQID 2581099636
PQPubID 546299
PageCount 7
ParticipantIDs proquest_miscellaneous_2552982715
proquest_journals_2581099636
pubmed_primary_34267369
springer_journals_10_1038_s41565_021_00942_z
PublicationCentury 2000
PublicationDate 20211000
2021-Oct
20211001
PublicationDateYYYYMMDD 2021-10-01
PublicationDate_xml – month: 10
  year: 2021
  text: 20211000
PublicationDecade 2020
PublicationPlace London
PublicationPlace_xml – name: London
– name: England
PublicationTitle Nature nanotechnology
PublicationTitleAbbrev Nat. Nanotechnol
PublicationTitleAlternate Nat Nanotechnol
PublicationYear 2021
Publisher Nature Publishing Group UK
Nature Publishing Group
Publisher_xml – name: Nature Publishing Group UK
– name: Nature Publishing Group
References Koma (CR45) 1999; 201/202
Jin (CR34) 2019; 5
Chhowalla (CR17) 2013; 5
Lin (CR46) 2018; 12
Novoselov, Mishchenko, Carvalho, Castro Neto (CR19) 2016; 353
Zhang, Lagally (CR35) 1997; 276
Kim (CR43) 2017; 3
Radisavljevic, Radenovic, Brivio, Giacometti, Kis (CR15) 2011; 6
Zou, Liu, Yakobson (CR42) 2013; 13
Ando, Fowler, Stern (CR1) 1982; 54
Schutte, De Boer, Jellinek (CR41) 1987; 70
Li (CR28) 2020; 579
Tran (CR21) 2019; 567
Bae (CR12) 2020; 15
Nakamura (CR7) 1998; 281
Haigh (CR31) 2012; 11
Faist (CR5) 1994; 264
Zultak (CR27) 2020; 11
Lu (CR37) 2017; 12
Köhler (CR6) 2002; 417
Abstreiter, Brugger, Wolf, Jorke, Herzog (CR9) 1985; 54
Kang (CR33) 2015; 520
Mendez, Bastard (CR13) 1993; 46
Kretinin (CR30) 2014; 14
Mak (CR47) 2008; 101
Zur, McGuill (CR10) 1984; 55
Zhao (CR29) 2021; 591
Mimura, Hiyamizu, Fujii, Nanbu (CR4) 1980; 19
Lee (CR38) 2020; 32
Bauer, van der Merwe (CR11) 1986; 33
Khan, Balakrishnan, Katona (CR8) 2008; 2
Kang (CR32) 2017; 550
Xie (CR36) 2018; 359
Mak, Lee, Hone, Shan, Heinz (CR14) 2010; 105
Cao (CR24) 2018; 556
Hong (CR44) 2014; 9
Britnell (CR16) 2013; 340
Schmidt (CR26) 2018; 13
Anderson, Apsley (CR2) 1983; 305
Geim, Grigorieva (CR18) 2013; 499
Heo (CR23) 2015; 6
Yu, Wang, Tong, Xu, Yao (CR20) 2015; 115
Jauregui (CR22) 2019; 366
Cao (CR25) 2018; 556
Vaziri (CR40) 2019; 5
Dingle, Störmer, Gossard, Wiegmann (CR3) 1978; 33
Liu (CR39) 2014; 5
References_xml – volume: 567
  start-page: 71
  year: 2019
  end-page: 75
  ident: CR21
  article-title: Evidence for moiré excitons in van der Waals heterostructures
  publication-title: Nature
  doi: 10.1038/s41586-019-0975-z
– volume: 9
  start-page: 682
  year: 2014
  end-page: 686
  ident: CR44
  article-title: Ultrafast charge transfer in atomically thin MoS /WS heterostructures
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/nnano.2014.167
– volume: 14
  start-page: 3270
  year: 2014
  end-page: 3276
  ident: CR30
  article-title: Electronic properties of graphene encapsulated with different two-dimensional atomic crystals
  publication-title: Nano Lett.
  doi: 10.1021/nl5006542
– volume: 12
  start-page: 965
  year: 2018
  end-page: 975
  ident: CR46
  article-title: Realizing large-scale, electronic-grade two-dimensional semiconductors
  publication-title: ACS Nano
  doi: 10.1021/acsnano.7b07059
– volume: 281
  start-page: 956
  year: 1998
  end-page: 961
  ident: CR7
  article-title: The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
  publication-title: Science
  doi: 10.1126/science.281.5379.956
– volume: 5
  start-page: 263
  year: 2013
  end-page: 275
  ident: CR17
  article-title: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
  publication-title: Nat. Chem.
  doi: 10.1038/nchem.1589
– volume: 366
  start-page: 870
  year: 2019
  end-page: 875
  ident: CR22
  article-title: Electrical control of interlayer exciton dynamics in atomically thin heterostructures
  publication-title: Science
  doi: 10.1126/science.aaw4194
– volume: 11
  start-page: 764
  year: 2012
  end-page: 767
  ident: CR31
  article-title: Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
  publication-title: Nat. Mater.
  doi: 10.1038/nmat3386
– volume: 101
  start-page: 196405
  year: 2008
  ident: CR47
  article-title: Measurement of the optical conductivity of graphene
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.101.196405
– volume: 54
  start-page: 437
  year: 1982
  end-page: 672
  ident: CR1
  article-title: Electronic properties of two-dimensional systems
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.54.437
– volume: 5
  start-page: eaax1325
  year: 2019
  ident: CR40
  article-title: Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.aax1325
– volume: 579
  start-page: 368
  year: 2020
  end-page: 374
  ident: CR28
  article-title: General synthesis of two-dimensional van der Waals heterostructure arrays
  publication-title: Nature
  doi: 10.1038/s41586-020-2098-y
– volume: 70
  start-page: 207
  year: 1987
  end-page: 209
  ident: CR41
  article-title: Crystal structures of tungsten disulfide and diselenide
  publication-title: J. Solid State Chem.
  doi: 10.1016/0022-4596(87)90057-0
– volume: 33
  start-page: 665
  year: 1978
  end-page: 667
  ident: CR3
  article-title: Electron mobilities in modulation-doped semiconductor heterojunction superlattices
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.90457
– volume: 32
  start-page: 5084
  year: 2020
  end-page: 5090
  ident: CR38
  article-title: Programmed band gap modulation within van der Waals semiconductor monolayers by metalorganic vapor-phase epitaxy
  publication-title: Chem. Mater.
  doi: 10.1021/acs.chemmater.0c00949
– volume: 359
  start-page: 1131
  year: 2018
  end-page: 1136
  ident: CR36
  article-title: Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain
  publication-title: Science
  doi: 10.1126/science.aao5360
– volume: 499
  start-page: 419
  year: 2013
  end-page: 425
  ident: CR18
  article-title: Van der Waals heterostructures
  publication-title: Nature
  doi: 10.1038/nature12385
– volume: 5
  year: 2014
  ident: CR39
  article-title: Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms5966
– volume: 19
  start-page: L225
  year: 1980
  end-page: L227
  ident: CR4
  article-title: A new field-effect transistor with selectively doped GaAs/n-Al Ga As heterojunctions
  publication-title: Jpn J. Appl. Phys.
  doi: 10.1143/JJAP.19.L225
– volume: 264
  start-page: 553
  year: 1994
  end-page: 556
  ident: CR5
  article-title: Quantum cascade laser
  publication-title: Science
  doi: 10.1126/science.264.5158.553
– volume: 340
  start-page: 1311
  year: 2013
  end-page: 1314
  ident: CR16
  article-title: Strong light–matter interactions in heterostructures of atomically thin films
  publication-title: Science
  doi: 10.1126/science.1235547
– volume: 3
  start-page: e1700518
  year: 2017
  ident: CR43
  article-title: Observation of ultralong valley lifetime in WSe /MoS heterostructures
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.1700518
– volume: 276
  start-page: 377
  year: 1997
  end-page: 383
  ident: CR35
  article-title: Atomistic processes in the early stages of thin-film growth
  publication-title: Science
  doi: 10.1126/science.276.5311.377
– volume: 201/202
  start-page: 236
  year: 1999
  end-page: 241
  ident: CR45
  article-title: Van der Waals epitaxy for highly lattice-mismatched systems
  publication-title: J. Cryst. Growth
  doi: 10.1016/S0022-0248(98)01329-3
– volume: 115
  start-page: 187002
  year: 2015
  ident: CR20
  article-title: Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.115.187002
– volume: 353
  start-page: aac9439
  year: 2016
  ident: CR19
  article-title: 2D materials and van der Waals heterostructures
  publication-title: Science
  doi: 10.1126/science.aac9439
– volume: 13
  start-page: 1035
  year: 2018
  end-page: 1041
  ident: CR26
  article-title: Nano-imaging of intersubband transitions in van der Waals quantum wells
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/s41565-018-0233-9
– volume: 6
  year: 2015
  ident: CR23
  article-title: Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks
  publication-title: Nat. Commun.
  doi: 10.1038/ncomms8372
– volume: 12
  start-page: 744
  year: 2017
  end-page: 749
  ident: CR37
  article-title: Janus monolayers of transition metal dichalcogenides
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/nnano.2017.100
– volume: 33
  start-page: 3657
  year: 1986
  end-page: 3671
  ident: CR11
  article-title: Structure and growth of crystalline superlattices: from monolayer to superlattice
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.33.3657
– volume: 46
  start-page: 34
  year: 1993
  end-page: 42
  ident: CR13
  article-title: Wannier–Stark ladders and Bloch oscillations in superlattices
  publication-title: Phys. Today
  doi: 10.1063/1.881353
– volume: 15
  start-page: 272
  year: 2020
  end-page: 276
  ident: CR12
  article-title: Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/s41565-020-0633-5
– volume: 54
  start-page: 2441
  year: 1985
  end-page: 2444
  ident: CR9
  article-title: Strain-induced two-dimensional electron gas in selectively doped Si/Si Ge superlattices
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.54.2441
– volume: 556
  start-page: 80
  year: 2018
  end-page: 84
  ident: CR25
  article-title: Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
  publication-title: Nature
  doi: 10.1038/nature26154
– volume: 591
  start-page: 385
  year: 2021
  end-page: 390
  ident: CR29
  article-title: High-order superlattices by rolling up van der Waals heterostructures
  publication-title: Nature
  doi: 10.1038/s41586-021-03338-0
– volume: 13
  start-page: 253
  year: 2013
  end-page: 258
  ident: CR42
  article-title: Predicting dislocations and grain boundaries in two-dimensional metal-disulfides from the first principles
  publication-title: Nano Lett.
  doi: 10.1021/nl3040042
– volume: 5
  start-page: eaaw3180
  year: 2019
  ident: CR34
  article-title: Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth
  publication-title: Sci. Adv.
  doi: 10.1126/sciadv.aaw3180
– volume: 55
  start-page: 378
  year: 1984
  end-page: 386
  ident: CR10
  article-title: Lattice match: an application to heteroepitaxy
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.333084
– volume: 305
  start-page: 668
  year: 1983
  end-page: 669
  ident: CR2
  article-title: Electronics: semiconductor superlattices
  publication-title: Nature
  doi: 10.1038/305668a0
– volume: 550
  start-page: 229
  year: 2017
  end-page: 233
  ident: CR32
  article-title: Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures
  publication-title: Nature
  doi: 10.1038/nature23905
– volume: 11
  year: 2020
  ident: CR27
  article-title: Ultra-thin van der Waals crystals as semiconductor quantum wells
  publication-title: Nat. Commun.
  doi: 10.1038/s41467-019-13893-w
– volume: 520
  start-page: 656
  year: 2015
  end-page: 660
  ident: CR33
  article-title: High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
  publication-title: Nature
  doi: 10.1038/nature14417
– volume: 105
  start-page: 136805
  year: 2010
  ident: CR14
  article-title: Atomically thin MoS : a new direct-gap semiconductor
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.105.136805
– volume: 417
  start-page: 156
  year: 2002
  end-page: 159
  ident: CR6
  article-title: Terahertz semiconductor-heterostructure laser
  publication-title: Nature
  doi: 10.1038/417156a
– volume: 6
  start-page: 147
  year: 2011
  end-page: 150
  ident: CR15
  article-title: Single-layer MoS transistors
  publication-title: Nat. Nanotechnol.
  doi: 10.1038/nnano.2010.279
– volume: 2
  start-page: 77
  year: 2008
  end-page: 84
  ident: CR8
  article-title: Ultraviolet light-emitting diodes based on group three nitrides
  publication-title: Nat. Photon.
  doi: 10.1038/nphoton.2007.293
– volume: 556
  start-page: 43
  year: 2018
  end-page: 50
  ident: CR24
  article-title: Unconventional superconductivity in magic-angle graphene superlattices
  publication-title: Nature
  doi: 10.1038/nature26160
SSID ssj0052924
Score 2.6012638
Snippet A broad range of transition metal dichalcogenide (TMDC) semiconductors are available as monolayer (ML) crystals, so the precise integration of each kind into...
SourceID proquest
pubmed
springer
SourceType Aggregation Database
Index Database
Publisher
StartPage 1092
SubjectTerms 140/125
140/133
639/301/357/1018
639/925/357/1018
Chalcogenides
Chemistry and Materials Science
Crystals
Dissimilar metals
Electronic systems
Epitaxial growth
Epitaxy
Excitation
Interlayers
Kinetics
Materials Science
Metalorganic chemical vapor deposition
Metals
Molybdenum disulfide
Nanotechnology
Nanotechnology and Microengineering
Organic chemicals
Organic chemistry
Semiconductors
Stacking
Superlattices
Transition metal compounds
Tungsten disulfide
Title Heteroepitaxial van der Waals semiconductor superlattices
URI https://link.springer.com/article/10.1038/s41565-021-00942-z
https://www.ncbi.nlm.nih.gov/pubmed/34267369
https://www.proquest.com/docview/2581099636
https://www.proquest.com/docview/2552982715
Volume 16
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1NS8NAEB20vehB_LZaSwSPBtP9SHZPotJaBIuIxd7CJtkck9i0IP31ziRpKyhe9pIQkpmX3Zl9s_MArhE1KbepdnUiMUFRvnaVUZGb-szi_yW5qFQUXsb-aCKep3LabLiVTVnlak6sJuokj2mP_JZJRSSOz_274tMl1ShiVxsJjW1oU-syQnUwXSdckula1DYQysVULGgOzXhc3ZaUuNDZZEymMcNh7vKvEPMXPVqtOsN92GvCRee-9u8BbNnsEHZ_NBE8Aj2iipbckvzHF6LJwdjYSezM-TAILaek6vc8o7au-cwpFwVt4M2p5K08hslw8P44chtBBLdgfT7Hb4gkrh6BEYxKoeIowXglYZ6wop96Og0i42tlPD9RQjCR9k0sUsuFiWNruLD8BFpZntkzcLiKuU641Ewmgqg65elYBqkxOArFO9BdWSNsUF2GGx904Gp9GfFIJIPJbL6ge9DsigV92YHT2ophUTfOCDmGAwH3dQduVmbdPLxiw7kKa8-E6Jmw8ky4PP__XS5gh5Efqwq7LrTms4W9xEhhHvUqOOCohk89aD8Mxq9v34Gau5Y
linkProvider ProQuest
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lb9NAEB6VcIAeKh59pA1gJLhh1dnZtXcPCCEgpPRxSkRv27W9PtppnKhtflR_Y2fsmCJRcevFF1u71sy389h5AXwg1BToCxOaXJGDomMTaqfTsIiFp_OlUDZTFE7P4vFU_jpX5xtw29XCcFplJxMbQZ1XGd-RHwqlOYgTY_xldhny1CiOrnYjNFpYHPubK3LZ6s9H34m_H4UY_Zh8G4frqQLhTAxxESKmikRw4qTgfKIszUnp5yKSXg6LyBRJ6mKjXRTnWkohi6HLZOFRuizzDqVHWvcJPJVImpwr00c_O8mvhGmH6CZS0zY6WRfpRKgPa3aUuBaanHfyqES4esik_Scc22i50QvYWpunwdcWTy9hw5evYPOvpoWvwYw5g6byPG7kmtAbkC0e5H4e_HYE5aDmbPuq5Day1TyolzO-MFxwil29DdNHIdUO9Mqq9HsQoM7Q5KiMULnk0KCOTKaSwjl6So19GHTUsOtTVNt7nvfh_Z_XhH8OarjSV0v-hsiuRTJUfdhtqWhnbaMOi2R-JBibPnzqyHq_eBN9R21bzljijG04Y1f7__-Xd_BsPDk9sSdHZ8cH8FwwT5vsvgH0FvOlf0NWyiJ920AjgIvHxuIdUbr1lA
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1Lb9QwEB6VrYTggMqrXSgQJLgRbdZjJ_YBVUC72lJYVYiK3lwnsY_JstkV0J_Gr2MmD4oE4tZLLonsaObzeMbzjQfgBaEmoA8mNqWiAEWnJtZO53FIhaf1pVC2XRQ-LtL5mXx_rs634OdQC8O0ysEmtoa6rAs-I58IpTmJk2I6CT0t4vRwdrD8GnMHKc60Du00Ooic-B_fKHxrXh8fkq5fCjE7-vxuHvcdBuKlmOI6RswVmePMScHcoiIvyQEoRSK9nIbEhCx3qdEuSUstpZBh6goZPEpXFN6h9Ejj3oDtjKOiEWy_PVqcfhr2ASVM11I3k5om0llfspOgnjQcNnFlNIXyFF-J-PJfDu5fydl2z5vtwJ3eWY3edOi6C1u-uge3_7jC8D6YOfNpas_NR74TliPyzKPSr6IvjoAdNcy9ryu-VLZeRc1myceHaybcNQ_g7FqE9RBGVV35PYhQF2hKVEaoUnKiUCemUFlwjp5S4xj2B2nYfk019goBY3j--zWtBk5xuMrXG_6GxK5FNlVj2O2kaJfdtR0WyRnJMDVjeDWI9WrwNheP2naasaQZ22rGXj76_788g5uEQ_vheHHyGG4JVmlL9duH0Xq18U_IZVnnT3tsRHBx3XD8BeQ8-yY
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Heteroepitaxial+van+der+Waals+semiconductor+superlattices&rft.jtitle=Nature+nanotechnology&rft.au=Jin%2C+Gangtae&rft.au=Lee%2C+Chang-Soo&rft.au=Okello%2C+Odongo+F+N&rft.au=Lee%2C+Suk-Ho&rft.date=2021-10-01&rft.eissn=1748-3395&rft.volume=16&rft.issue=10&rft.spage=1092&rft_id=info:doi/10.1038%2Fs41565-021-00942-z&rft_id=info%3Apmid%2F34267369&rft.externalDocID=34267369
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1748-3387&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1748-3387&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1748-3387&client=summon