Effects of sulfide treatment on InP metal-insulator-semiconductor devices with photochemical vapor deposit P3N5 gate insulators

• Published in: Japanese Journal of Applied Physics Vol. 34; no. 10B; pp. L1329 - L1331
• Main Authors: YOON-HA JEONG, BONG-HOON LEE, SEONG-KUE JO, MOON-YOUNG JEONG, SUGANO, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 15.10.1995
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Depletion mode; Indium Phosphides; Photochemical method; Transistor gate; MIS structure; Density distribution; Chemical vapor deposition; Power transistor; Field effect transistor; Charge carrier trapping; Microelectronic fabrication; MIS transistor; Phosphorus Nitrides; Electron mobility; Microwave transistor; Electrical characteristic
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.34.L1329

The effects of sulfide treatment on Al-P3Ns/InP metal-insulator-semiconductor (MIS) devices with a photochemical vapor deposit P3Ns insulating film are investigated. The minimum density of interface trap states is as low as 2.6 x 10 exp 10/sq cm-eV, and has been obtained from a sample sulfide-treated at 40 C for 20 min. We have successfully fabricated depletion-mode InP metal-insulator-semiconductor field-effect transistors (MISFETs) for microwave power device applications. The effective channel electron mobility is observed to be 3100 sq cm/V-s at 300 K. The extrinsic transconductance of 5.8 mS/mm shows a broad plateau region over a range of nearly 4 V gate voltage swing. (Author)