Lower temperature and shorter curing time of methylsilsesquioxane for intermetal dielectric application

• Published in: Journal of materials science letters Vol. 18; no. 1; pp. 33 - 34
• Main Authors: CHUA, C. T, SARKAR, G, CHOOI, S. Y. M, CHAN, L
• Format: Journal Article
• Language: English
• Published: Dordrecht Kluwer Academic Publishers 1999
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric properties of solids and liquids; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Permittivity (dielectric function); Physics; Polymers; organic compounds; Temperature dependence; Dielectric materials; Infrared spectra; Experimental study; CV characteristic; Thickness; Cross-linking; Preparation; Vibrational modes; Chemical bonds; Curing; Spin-on coating; Permittivity; Organic compounds
• ISSN: 0261-8028
• DOI: 10.1023/A:1006665007754

An alternative technique for intermetal dielectric (IMD) isolation of methylsilsesquioxane is to use chemical vapor deposition (CVD) method. The out-of-plane dielectric constant measurements remains unchanged in the curing temperature range of 350 degree C-450 degree C. Fourier transform infrared spectra concluded that the chemical bondings do not change significantly in the same curing temperature range. The only change detected is the shrinkage after curing above 425 degree C for one hour. A lower temperature and shorter time curing condition is possible for this particular spin-on polymer to achieve its low dielectric constant characteristic without significant chemical bonding changes.