CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect
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| Published in | IEEE transactions on electron devices Vol. 54; no. 1; pp. 59 - 67 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York, NY
Institute of Electrical and Electronics Engineers
2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0018-9383 1557-9646 |
| DOI | 10.1109/TED.2006.887517 |
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| Author | CHUANZHAO YU YUAN, J. S |
|---|---|
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| Keywords | Gate current Inverter Noise figure MOSFET CMOS oscillators Electric breakdown dielectric breakdown (BD) Low noise amplifier Transfer characteristic n channel Cascode connection Power transistor Ring oscillator Charge carrier trapping fast transient charge effect low-noise amplifier (LNA) Complementary MOS technology Output voltage Transistor channel Leakage current CMOS integrated circuits Reliability Damaging |
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| PublicationTitle | IEEE transactions on electron devices |
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| SubjectTerms | Applied sciences Design. Technologies. Operation analysis. Testing Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Integrated circuits Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| Title | CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect |
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