CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect

• Published in: IEEE transactions on electron devices Vol. 54; no. 1; pp. 59 - 67
• Main Authors: CHUANZHAO YU, YUAN, J. S
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 2007; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Integrated circuits; Other multijunction devices. Power transistors. Thyristors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Gate current; Inverter; Noise figure; MOSFET; CMOS oscillators; Electric breakdown; dielectric breakdown (BD); Low noise amplifier; Transfer characteristic; n channel; Cascode connection; Power transistor; Ring oscillator; Charge carrier trapping; fast transient charge effect; low-noise amplifier (LNA); Complementary MOS technology; Output voltage; Transistor channel; Leakage current; CMOS integrated circuits; Reliability; Damaging
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2006.887517