Form GaAs/InGaAs Lasers On Virtual Ge

Two-step low-pressure MOCVD processes were performed in this study. First, an epitaxial Ge layer was grown on the patterned substrate under optimized growth conditions similar to that described previously. 8 Ge growth was terminated after the Ge layer slightly coalesces in the 20- km spacer section...

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Bibliographic Details
Published inMicrowaves & RF Vol. 48; no. 10; p. 68
Main Authors Li, J Z, Hydrick, J M, Park, J S, Li, J, Bai, J, Cheng, Z Y, Carroll, M, Fiorenza, J G, Lochtefeld, A, Chan, W, Shellenbarger, Z
Format Magazine Article Trade Publication Article
LanguageEnglish
Published Nashville Endeavor Business Media 01.10.2009
Subjects
Chemical vapor deposition
Defects
Gallium arsenide
Interfaces
Lasers
Misfit dislocations
Optoelectronics
Scanning electron microscopy
Silicon
Temperature
United States > US
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Summary:Two-step low-pressure MOCVD processes were performed in this study. First, an epitaxial Ge layer was grown on the patterned substrate under optimized growth conditions similar to that described previously. 8 Ge growth was terminated after the Ge layer slightly coalesces in the 20- km spacer section (later referred to as the ELO section), which corresponds to an average layer thickness of about 4 km.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0745-2993
2162-1411