Preparation of MgxZn1-xO/Au/MgxZn1-xO multilayer transparent conductive film and studies of its photoelectric properties

• Published in: Guang pu xue yu guang pu fen xi Vol. 34; no. 9; p. 2355
• Main Authors: Lü, Shan-Shan, Fang, Xuan, Wang, Jia-Qi, Fang, Fang, Zhao, Hai-Feng, Chu, Xue-Ying, Li, Jin-Hua, Fang, Dan, Tang, Ji-Long, Wei, Zhi-Peng, Ma, Xiao-hui, Wang, Xiao-Hua, Pu, Shuang-Shuang, Xu, Li
• Format: Journal Article
• Language: Chinese
• Published: China 01.09.2014
• ISSN: 1000-0593
• DOI: 10.3964/j.issn.1000-0593(2014)09-2355-05

In the present paper, MgxZn1-xO and MgxZn1-xO/Au/MgxZn1-xO multilayer structures of transparent conductive film were prepared by the simple operation of sol-gel and RF magnetron sputtering method on quartz substrate respectively and then they were annealed. The surface, electrical, crystal and optical properties of the films at different annealing temperature were determined by UV-Vis spectrophotometer, X-ray diffraction, photoluminescence and Hall effect, respectively. The influence of annealing temperature on the films was also investigated. The testing results indicated that the films with good c-axis orientation presented hexagonal wurtzite structure. With increasing Mg components, the optical band gap of ZnO thin film increased gradually. There was an obvious blue shift phenomenon in PL spectrum and absorption spectrum line. But the electrical properties of the films declined. In MgxZn1-xO/Au/MgxZn1-xO multilayer structure of thin film samples, the existence of Au interlining led to the poor optical prop