Optoelectrical and low-frequency noise characteristics of flexible ZnO-SiO2 photodetectors with organosilicon buffer layer

• Published in: Optics express Vol. 21; no. 8; pp. 9643 - 9651
• Main Authors: Lai, Wei-Chih, Chen, Jiun-Ting, Yang, Ya-Yu
• Format: Journal Article
• Language: English
• Published: United States 22.04.2013
• Subjects: Electric Conductivity; Equipment Design; Equipment Failure Analysis; Light; Organic Chemicals - chemistry; Organic Chemicals - radiation effects; Photometry - instrumentation; Semiconductors; Signal-To-Noise Ratio; Silicon Dioxide - chemistry; Silicon Dioxide - radiation effects; Zinc Oxide - chemistry; Zinc Oxide - radiation effects
• ISSN: 1094-4087
• DOI: 10.1364/OE.21.009643

The present study demonstrates the optoelectrical and low-frequency noise characteristics of ZnO-SiO(2) nanocomposite solar-blind metal-semiconductor-metal photodetectors (MSM PDs) on flexible polyethersulfone (PES) substrate with and without an organosilicon [SiO(x)(CH(3))] buffer layer. For a given bandwidth of 100 Hz and a -5 V applied bias, the noise equivalent powers of the ZnO-SiO(2) nanocomposite MSM PD on PES with and without the SiO(x)(CH(3)) buffer layer were 1.39 × 10(-14) and 5.72 × 10(-14) W at 240nm, respectively, corresponding to the normalized detectivities of 5.04 × 10(14) and 1.22 × 10(14) Hz(0.5) W(-1), respectively. These findings indicate that a lower noise level and a higher detectivity can be achieved for ZnO-SiO(2) nanocomposite MSM PDs on PES by introducing a SiO(x)(CH(3)) buffer layer.