The study of optical band edge property of bismuth oxide nanowires α-Bi2O3

• Published in: Optics express Vol. 21; no. 10; pp. 11965 - 11972
• Main Authors: Ho, Ching-Hwa, Chan, Ching-Hsiang, Huang, Ying-Sheng, Tien, Li-Chia, Chao, Liang-Chiun
• Format: Journal Article
• Language: English
• Published: United States 20.05.2013
• Subjects: Bismuth - chemistry; Luminescent Measurements - methods; Materials Testing; Nanowires - chemistry; Nanowires - ultrastructure
• ISSN: 1094-4087
• DOI: 10.1364/OE.21.011965

The α-phase Bi(2)O(3) (α-Bi(2)O(3)) is a crucial and potential visiblelight photocatalyst material needless of intentional doping on accommodating band gap. The understanding on fundamental optical property of α-Bi(2)O(3) is important for its extended applications. In this study, bismuth oxide nanowires with diameters from tens to hundreds nm have been grown by vapor transport method driven with vapor-liquid-solid mechanism on Si substrate. High-resolution transmission electron microscopy and Raman measurement confirm α phase of monoclinic structure for the as-grown nanowires. The axial direction for the as-grown nanowires was along < 122 >. The band-edge structure of α-Bi(2)O(3) has been probed experimentally by thermoreflectance (TR) spectroscopy. The direct band gap was determined accurately to be 2.91 eV at 300 K. Temperaturedependent TR measurements of 30-300 K were carried out to evaluate temperature-energy shift and line-width broadening effect for the band edge of α-Bi(2)O(3) thin-film nanowires. Photoluminescence (PL) experiments at 30 and 300 K were carried out to identify band-edge emission as well as defect luminescence for the α-Bi(2)O(3) nanowires. On the basis of experimental analyses of TR and PL, optical characteristics of direct band edge of α-Bi(2)O(3) nanowires have thus been realized.