Photoluminescence from Si and Er dual-implanted Si-rich thermal oxidation SiO2/Si thin films

Si and Er ions were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter, which could produce ion beams with high-fluence and strong-flux. Rutheroford backscattering spectra show that Er concentration in as-implanted sample is attained...

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Bibliographic Details
Published inGuang pu xue yu guang pu fen xi Vol. 22; no. 4; p. 538
Main Authors Xiao, Zhi-song, Xu, Fei, Zhang, Tong-he, Cheng, Guo-an, Gu, Lan-lan
Format Journal Article
LanguageChinese
Published China 01.08.2002
Subjects
Crystallization
Erbium - chemistry
Hot Temperature
Luminescence
Nanotechnology
Oxidation-Reduction
Scattering, Radiation
Silicon - chemistry
Silicon Dioxide - chemistry
Vacuum
Volatilization
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Summary:Si and Er ions were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter, which could produce ion beams with high-fluence and strong-flux. Rutheroford backscattering spectra show that Er concentration in as-implanted sample is attained to 10 at. % corresponding to the level of 10(21) atoms.cm-3. Needle nanocrystal Si in the surface of annealed samples have been formed during ion implantation followed by rapid thermal annealing. Photoluminescence around 1.54 microns from Er-doped Si-rich thermal oxidized SiO2/Si thin film were observed at 77 K and room-temperature (RT). Light emission around the wavelength of 1.54 microns were closely related to many conditions including substrate, ion implantation and annealing etc.
ISSN:1000-0593