The role of high-energy electron irradiation induced defects in some mechanical properties of Si-SiO2 structures

The mechanical stress produced by 23 MeV energy electron radiation in both n- and p-type Si-S102 structures is studied as a function of the dose. Low dose electron irradiation (2,4 - 4,8x1014 cm 2) increases significantly the yield stress for n-type Si-SiO2 samples, but to a much lesser extent for p...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 9; no. 2; pp. 394 - 397
Main Authors Kaschieva, S, Christova, K, Boradjiev, I, Petrova, A, Koprinarova, J, Dmitriev, S N
Format Journal Article
LanguageEnglish
Published 01.02.2007
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Summary:The mechanical stress produced by 23 MeV energy electron radiation in both n- and p-type Si-S102 structures is studied as a function of the dose. Low dose electron irradiation (2,4 - 4,8x1014 cm 2) increases significantly the yield stress for n-type Si-SiO2 samples, but to a much lesser extent for p-type ones. The nanohardness of irradiated structures is measured using the scierometry method. Our results show that the nanohardness increases with the dose in the same manner for both groups studied. The values are very close, but for p-type samples are consistently higher. The variations of both the stress and nanohardness are remarkable at low doses. These mechanical properties of the irradiated samples are discussed on the basis of radiation induced defects.
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ISSN:1454-4164