INFLUENCE OF STRUCTURAL PROPERTIES ON RF AND MICROWAVE CHARACTERISTICS OF BaSrTiO3 FILMS ON VARIOUS SUBSTRATES

Ferroelectric BaxSr1-xTiO3 (BSTO) films were grown on various substrates (SrTiO3, LaAlO3, MgO, f-Al2O3, alumina, and Y3Fe5O12) using RF sputtering. The results of complex BSTO diagnostics using medium energy ion scattering (MEIS) were compared with dielectric characteristics at 1 MHz and 30 GHz. The...

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Published inIntegrated ferroelectrics Vol. 47; pp. 207 - 216
Main Authors Karmanenko, S F, Dedyk, A I, Isakov, N N, Oh, Y-J, Sakharov, V I, Serenkov, I T
Format Journal Article
LanguageEnglish
Published 01.01.2002
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Summary:Ferroelectric BaxSr1-xTiO3 (BSTO) films were grown on various substrates (SrTiO3, LaAlO3, MgO, f-Al2O3, alumina, and Y3Fe5O12) using RF sputtering. The results of complex BSTO diagnostics using medium energy ion scattering (MEIS) were compared with dielectric characteristics at 1 MHz and 30 GHz. The BSTO films were different on the MEIS yield hs characterizing film structure and temperature Tm corresponded to maximal capacitance of BSTO varactor. Highly-oriented BSTO films of - 500 nm thick grown on MgO and LaAlO3 had Tm = (150-230 K). The films grown on sapphire, alumina and YIG substrates had less ordered structure, lower strains, Tm = (250-260 K). 14 refs.
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ISSN:1058-4587
DOI:10.1080/10584580215426