INDIUM ASSISTED HYDRIDE VAPOUR PHASE EPITAXY OF GaN FILM

In order to increase the migration length of adatoms in hydride vapour phase epitaxy (HVPE) of GaN films, indium was used as a surfactant in HVPE growth. For samples with indium, an increase of crystalline quality was confirmed by XRD and an improvement of surface morphology was also seen. SIMS anal...

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Published inJournal of Ceramic Processing & Research Vol. 7; no. 2; pp. 180 - 182
Main Authors Yu, G, Lei, B, Ye, H, Meng, S, Qi, M, Li, A, Ruterana, P, Chen, J, Nouet, G
Format Journal Article
LanguageEnglish
Published 01.01.2006
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Summary:In order to increase the migration length of adatoms in hydride vapour phase epitaxy (HVPE) of GaN films, indium was used as a surfactant in HVPE growth. For samples with indium, an increase of crystalline quality was confirmed by XRD and an improvement of surface morphology was also seen. SIMS analysis showed that indium was incorporated in the as-grown GaN film and indium related photoluminescence was also detected. 8 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1229-9162