CHANGES IN THE ELECTRONIC STRUCTURE OF Ge-As-S THIN FILMS AFTER ILLUMINATION

The electronic structure of Ge-As-S glasses and films has been studied by means of X-ray photoelectron spectroscopy (XPS). Several compositions from two lines (Ge2S3 - As2S3 and Ge,AsySio0-2y) of the glass-forming region were investigated. The study was carried on the Ge3p, As3d and S2p core peaks i...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 7; no. 3; pp. 1265 - 1270
Main Authors Pamukchieva, V, Skordeva, E, Arsova, D, Guimon, M-F, Gonbeau, D
Format Journal Article
LanguageEnglish
Published 01.06.2005
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Summary:The electronic structure of Ge-As-S glasses and films has been studied by means of X-ray photoelectron spectroscopy (XPS). Several compositions from two lines (Ge2S3 - As2S3 and Ge,AsySio0-2y) of the glass-forming region were investigated. The study was carried on the Ge3p, As3d and S2p core peaks in glasses and evaporated from them thin films. Spectra were recorded before and after illumination and/or annealing of the films. Differences between the relative chemical shift of the core peaks connected with changes initiated by illumination and/or annealing are checked and discussed.
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ISSN:1454-4164