PHOTOINDUCED CHANGES IN Ge-As-S THIN FILMS WITH VARIOUS NETWORK RIGIDITIES

Photo- and thermally induced changes in the optical bandgap and thickness are investigated in thin films that belong to three lines traced through regions with different rigidities in the Ge-As-S system. The dependences of the photo- and thermally induced bleaching of the fresh films on the average...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 7; no. 3; pp. 1259 - 1264
Main Authors Arsova, D, Skordeva, E, Pamukchieva, V, Vateva, E
Format Journal Article
LanguageEnglish
Published 01.06.2005
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Summary:Photo- and thermally induced changes in the optical bandgap and thickness are investigated in thin films that belong to three lines traced through regions with different rigidities in the Ge-As-S system. The dependences of the photo- and thermally induced bleaching of the fresh films on the average coordination number, as well as of the photodarkening of the annealed films, show a global maximum in the range 2.6 - 2.7.
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ISSN:1454-4164