A single 3.3 V 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaA...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 9; no. 9; pp. 2809 - 2812
Main Authors Chu, Chen-Kuo, Huang, Hou-Kuei, Liu, Hong-Zhi, Chiu, Jui-Chieh, Lin, Che-Hung, Hsu, Chuan-Chien, Wu, Chang-Luen, Chang, Chian-Sern, Wang, Yeong-Her
Format Journal Article
LanguageEnglish
Published 01.09.2007
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Summary:A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications.
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ISSN:1454-4164