A single 3.3 V 2.4-2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor
A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaA...
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Published in | Journal of Optoelectronics and Advanced Materials Vol. 9; no. 9; pp. 2809 - 2812 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.09.2007
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Online Access | Get full text |
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Summary: | A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz-2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1454-4164 |