Preparation and characterization of ZnSxCdSe1-x/ZnTe heterojunctions

Thin films of ZnTe, ZnTe:Cu have been grown on glass substrates by vacuum evaporation. Doping increases the conductivity by three orders of magnitude. The optical band gap and structure were also determined. Heterojunctions of ZnTe/ZnSxCdSe1-x were prepared and characterized by dark J-V, C-V and Pho...

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Published inJournal of Optoelectronics and Advanced Materials Vol. 10; no. 2; pp. 446 - 450
Main Authors Lakshmi, R P Vijaya, Gopal, R Vend, Reddy, D Sreekantha, Reddy, B K
Format Journal Article
LanguageEnglish
Published 01.02.2008
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Summary:Thin films of ZnTe, ZnTe:Cu have been grown on glass substrates by vacuum evaporation. Doping increases the conductivity by three orders of magnitude. The optical band gap and structure were also determined. Heterojunctions of ZnTe/ZnSxCdSe1-x were prepared and characterized by dark J-V, C-V and Photovoltaic studies. The dark conductivity studies with temperature shows the dominance of tunneling mechanism in these heterojunctions. The open circuit voltages obtained for ZnTe/ZnS.CdSe1-x were in the range 0.42 - 0.50 V. The short circuit current densities are in the range 5.55 -7.05 mA/cm2 and efficiencies varied in the range 1.35 - 2.05 %.
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ISSN:1454-4164