Linking EUV lithography line edge roughness and 16 nm NAND memory performance

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Bibliographic Details
Published inMicroelectronic engineering Vol. 98; pp. 24 - 28
Main Authors VAGLIO PRET, Alessandro, POLIAKOV, Pavel, GRONHEID, Roel, BLOMME, Pieter, CORBALAN, Miguel Miranda, DEHAENE, Wim, VERKEST, Diederik, VAN HOUDT, Jan, BIANCHI, Davide
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.10.2012
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface treatments
Transistors
Performance evaluation
State of the art
Bit error rate
Roughness
Plasma assisted processing
Ion beam
Low frequency
Microelectronic fabrication
Uncertain system
Extreme UV lithography
Measuring system
Vacuum ultraviolet radiation
Photolithography
Line edge/width roughness
Ion implantation
Power spectral density
Transistor
Electron microscopy
Array
Optical system
UV lithography
Plasma etching
Integrated circuit
Metrology
Resist
Error correcting code
Miniaturization
Measurement method
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.04.013