Photoluminescence characterization of InGaAs/AlGaAs strained-quantum well active layer on GaAs substrate with 1.02-1.06-μm wavelength composition under high-power 920-nm-laser excitation
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Main Authors | , |
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Format | Conference Proceeding |
Language | English |
Published |
Piscataway NJ
IEEE
2004
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Subjects | |
Online Access | Get full text |
Cover
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ISBN: | 0780385950 9780780385955 |
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