Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
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Published in | IEEE transactions on electron devices Vol. 57; no. 8; pp. 1801 - 1808 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.08.2010
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Subjects | |
Online Access | Get full text |
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ISSN: | 0018-9383 1557-9646 |
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DOI: | 10.1109/TED.2010.2050837 |