Investigation of Tunneling Current in SiO2/HfO2 Gate Stacks for Flash Memory Applications

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 58; no. 12; pp. 4189 - 4195
Main Authors CHAKRABARTI, Bhaswar, KANG, Heesoo, BRENNAN, Barry, TAE JOO PARK, CANTLEY, Kurtis D, PIRKLE, Adam, MCDONNELL, Stephen, KIM, Jiyoung, WALLACE, Robert M, VOGEL, Eric M
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.2011
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Performance evaluation
Memory devices
Annealing
Stacking
Tunnel effect
Transistor gate
Multiple layer
Hafnium oxide
Fowler-Nordheim (F-N) tunneling
IV-VI compound
Charge traps
high-k dielectric
Non volatile memory
Flash memory
Silicon oxides
Integrated circuit
High k dielectric
tunnel barrier engineering
Electrical characteristic
Fowler Nordheim tunneling
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2170198