Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in 〈001〉-, 〈110〉-, and 〈111〉-Oriented Si Nanowires

• Published in: IEEE transactions on electron devices Vol. 59; no. 5; pp. 1480 - 1487
• Main Authors: NIQUET, Yann-Michel, DELERUE, Christophe, RIDEAU, Denis, VIDEAU, Brice
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.05.2012
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Electron scattering; Boltzmann equation; mobility; nanowire (NW); tight binding (TB); simulation; valence-force field; Hole mobility; Electron-phonon scattering; Low field; Tight binding approximation; Electron mobility; Terbium; Nanowires; Phonon scattering; Carrier density
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2187788