Resistance Controllability of Ta2O5/TiO2 Stack ReRAM for Low-Voltage and Multilevel Operation

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Bibliographic Details
Published inIEEE electron device letters Vol. 31; no. 3; pp. 204 - 206
Main Authors TERAI, M, SAKOTSUBO, Y, KOTSUJI, S, HADA, H
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.03.2010
Subjects
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching, multiplexing, switched capacity circuits
Filament
Stacking
Random access memory
multilevel
resistive random access memory (ReRAM)
RRAM
Ta
Switching
O
Low voltage
Repeatability
resistive switch
1T1R
Non volatile memory
Integrated circuit
Controllability
Selector switch
TiO
Multilevel system
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More Information
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2039021