High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

• Published in: IEEE electron device letters Vol. 34; no. 3; pp. 354 - 356
• Main Authors: PARK, Bong-Ryeol, LEE, Jae-Gil, CHOI, Woojin, KIM, Hyungtak, SEO, Kwang-Seok, CHA, Ho-Young
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.03.2013
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Compound structure devices; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Ternary compound; Voltage threshold; MOSFET; Binary compound; Transistor gate; Gallium nitride; IV-VI compound; Optimization; Microelectronic fabrication; Disruptive voltage; GaN; Drain current; SiO; Current density; Damaging; inductively coupled plasma chemical vapor deposition (ICPCVD); Aluminium nitride; Chemical vapor deposition; III-V compound; Switching; Inductively coupled plasma; Silicon oxides; Gate oxide; Manufacturing process; metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET); Heterojunction field effect transistor; Heterostructures
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2236678