HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties
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Published in | Microelectronic engineering Vol. 87; no. 11; pp. 2234 - 2240 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier
01.11.2010
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Subjects | |
Online Access | Get full text |
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ISSN: | 0167-9317 1873-5568 |
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DOI: | 10.1016/j.mee.2010.02.009 |