HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

• Published in: Microelectronic engineering Vol. 87; no. 11; pp. 2234 - 2240
• Main Authors: MALLIK, S, MAHATA, C, HOTA, M. K, DALAPATI, G. K, CHI, D. Z, SARKAR, C. K, MAITI, C. K
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.11.2010
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Diffusion; interface formation; Electronics; Exact sciences and technology; Interface structure and roughness; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Valence bands; Density of states; Ge-Si alloys; Hafnium oxide; Interface structure; Multilayers; Secondary ion mass spectra; Microelectronic fabrication; SiGe; Band offset; Interface reaction; Hysteresis; Electrical characteristic; Ultrathin films; Aluminium oxide; Conduction bands; Band structure; HfAlO; Interface energy; Electrical properties; Ternary compounds; Interface electron state; Energy band; Time-of-flight method; Secondary ion mass spectrometry; Interface states; Binary alloys; Electrical measurement; Charge carrier trapping; High-k gate dielectrics; High k dielectric; Sputter deposition; Interface; X-ray photoelectron spectra
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2010.02.009