Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 33; no. 12; pp. 1693 - 1695
Main Authors TSAI, Tsung-Ming, CHANG, Kuan-Chang, TAI, Ya-Hsiang, GAN, Der-Shin, CONG YE, HAO WANG, SZE, Simon M, CHANG, Ting-Chang, CHANG, Geng-Wei, SYU, Yong-En, SU, Yu-Ting, LIU, Guan-Ru, LIAO, Kuo-Hsiao, CHEN, Min-Chen, HUANG, Hui-Chun
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.2012
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Random access memory
Carbon dioxide
Doped materials
Supercritical state
hydration-dehydration reaction
IV-VI compound
Hopping conduction
Thin film
Tin addition
Non volatile memory
Silicon oxides
Tin oxide
Integrated circuit
Supercritical solvent
resistance random access memory (RRAM)
Dangling bond
supercritical fluid
X-ray photoelectron spectra
Online AccessGet full text

Cover

More Information
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2217932