Low chirp operation in 1.6 mu m quantum dot laser under 2.5 GHz direct modulation

A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature. The laser had a threshold current of 20 mA. Laser was fabricated by molecular beam epitaxy on an n-doped InP susbstrate. The chirp property was studied at room temperature whe...

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Bibliographic Details
Published inElectronics letters Vol. 37; no. 21; pp. 1293 - 1295
Main Authors Saito, H, Nishi, K, Sugou, S
Format Journal Article
LanguageEnglish
Published 11.10.2001
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Summary:A long wavelength InAs quantum dot laser on an InP substrate was operated under continuous wave current at room temperature. The laser had a threshold current of 20 mA. Laser was fabricated by molecular beam epitaxy on an n-doped InP susbstrate. The chirp property was studied at room temperature when the sinusoidal modulation current was superimposed on a DC bias current.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0013-5194
DOI:10.1049/el:20010887